Ordering of vacancies on Si(001)

Ordering of vacancies on Si ( OO 1 ) ’

Missing dimer vacancies are always present on the clean Si(OO1) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (0,, Bra,&, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (~0.2-0.3 monolayers) of these vacancy islands is elongated in a direction perpendicular to the dimer rows of the upper terrace, whereas for higher vacancy c...

Effects of vacancies on overshooting in nonequilibrium ordering processes.

Effects of mobile vacancies on the dynamics of ordering and phase separation in nonconserved multicomponent systems.

Monte Carlo computations on long- and short-range order in ordering binary alloys with vacancies

For ordering binary BCC alloys with vacancies equilibrium states of order have been simulated by means of Monte Carlo computations. The computer lattice consisted of 2 x 15 x 15 x 15 = 6750 sites. According to the Ising model only nearest-neighbour interactions have been taken into account. For various compositions and various sets of interaction energies, longand short-range order parameters f...

Dynamics of ordering processes in annealed dilute systems: Island formation, vacancies at domain boundaries, and compactification.